Standard

IEC 60749-34:2004 ED1

Mar 2004 Revised

Note: This standard has a new edition: IEC 60749-34:2010 ED2

Corrigendums and amendments are bought separately.

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Abstract

Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed causing rapid changes of temperature. The power cycling test is complementary to high temperature operating life.

Document information

Standard from IEC
Published: 10 March 2004
Withdrawn: 28 October 2010
Edition: 1
Version: 1
Document type: IS
Pages
ISBN: 2831874246

ICS 31.080.01
ISO TC TC 47

Product Relations

Revised by: IEC 60749-34:2010 ED2
Replaces: IEC PAS 62206:2000 ED1

IEC 60749-34:2004 ED1

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IEC 60749-34:2010 ED2