Standard

NEK IEC 63068-3:2020

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Omfang

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Dokumentinformasjon

  • Standard fra NEK
  • Publisert:
  • Utgave: 1.0
  • Versjon: 1
  • Varetype: NAT
  • ICS 31.080.99
  • National Committee NEK/NK47

Produktrelasjon

  • Adoptert fra: IEC 63068-3:2020