Standard

NEK IEC 63068-3:2020

Jul 2020 Published

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Language English

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Abstract

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Document information

Standard from NEK
Published: 13 July 2020
Edition: 1.0
Version: 1
Document type: NAT
ISBN:

ICS 31.080.99
National Committee NEK/NK47

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Adopted from: IEC 63068-3:2020

NEK IEC 63068-3:2020

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Abstract

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