Standard

NEK IEC 62417:2010

Publisert
Forhåndsvisning

Rettelser og tillegg kjøpes separat.

Språk
Tjenester

Omfang

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Dokumentinformasjon

  • Standard fra NEK
  • Publisert:
  • Utgave: 1.0
  • Versjon: 1
  • Varetype: NAT
  • ICS 31.080.30
  • National Committee NEK/NK47

Produktrelasjon