Standard

NEK IEC 62417:2010

Apr 2010 Published

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Language English

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Abstract

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Document information

Standard from NEK
Published: 22 April 2010
Edition: 1.0
Version: 1
Document type: NAT
ISBN:

ICS 31.080.30
National Committee NEK/NK47

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Adopted from: IEC 61061-2:1992+AMD1:2001 CSV
Adopted from: IEC 61061-2:1992 ED1
Adopted from: IEC 62417:2010

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Abstract

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Abstract

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