Standard

ISO 14706:2014

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ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

Dokumentinformasjon

  • Standard fra ISO
  • Publisert:
  • products.specs.Expires:
  • Utgave: 2
  • Versjon: 1
  • Varetype: IS
  • ICS 71.040.40
  • ISO TC ISO/TC 201

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