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IEC 63275-2:2022 ED1

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IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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  • Standard fra IEC
  • Publisert:
  • Utgave: 1
  • Versjon: 1
  • Varetype: IS
  • Products.Specs.pages
  • ICS 31.080.30
  • ISO TC TC 47

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