Standard

IEC 63275-2:2022 ED1

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Abstract

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Document information

  • Standard from IEC
  • Published:
  • Edition: 1
  • Version: 1
  • Document type: IS
  • Pages
  • ICS 31.080.30
  • ISO TC TC 47

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