Standard

IEC 63275-1:2022 ED1

Publisert

Rettelser og tillegg kjøpes separat.

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Omfang

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

Dokumentinformasjon

  • Standard fra IEC
  • Publisert:
  • Utgave: 1
  • Versjon: 1
  • Varetype: IS
  • ICS 31.080.30
  • ISO TC TC 47

Produktrelasjon

  • Frankfurt-avtale: prEN IEC 63275-1:2021