Standard

IEC 63275-1:2022 ED1

Apr 2022 Published

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Abstract

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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Standard from IEC
Published: 21 April 2022
Edition: 1
Version: 1
Document type: IS
ISBN:

ICS 31.080.30
ISO TC TC 47

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IEC 63275-1:2022 ED1

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Abstract

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