Standard

IEC 63068-1:2019 ED1

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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Dokumentinformasjon

  • Standard fra IEC
  • Publisert:
  • Utgave: 1
  • Versjon: 1
  • Varetype: IS
  • ICS 31.080.99
  • ISO TC TC 47

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