Standard

IEC 63068-1:2019 ED1

Jan 2019 Published

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Language English

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Abstract

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

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Standard from IEC
Published: 30 January 2019
Edition: 1
Version: 1
Document type: IS
ISBN: 9782832264799

ICS 31.080.99
ISO TC TC 47

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Adopted by: NEK ISO/IEC 24770-61:2015

IEC 63068-1:2019 ED1

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Abstract

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Abstract

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