Standard

IEC 62417:2010 ED1

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IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Dokumentinformasjon

  • Standard fra IEC
  • Publisert:
  • Utgave: 1
  • Versjon: 1
  • Varetype: IS
  • ICS 31.080.30
  • ISO TC TC 47

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