Standard

IEC 62417:2010 ED1

Apr 2010 Published

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Abstract

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Document information

Standard from IEC
Published: 22 April 2010
Edition: 1
Version: 1
Document type: IS
ISBN:

ICS 31.080.30
ISO TC TC 47

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Adopted by: NEK IEC 60249-2-13:1987

IEC 62417:2010 ED1

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Abstract

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Abstract

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