Standard

NEK IEC 63068-2:2019

Jan 2019 Published

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Language English

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Abstract

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

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Standard from NEK
Published: 30 January 2019
Edition: 1.0
Version: 1
Document type: NAT
ISBN:

ICS 31.080.99
National Committee NEK/NK47

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Adopted from: IEC 63068-2:2019

NEK IEC 63068-2:2019

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Abstract

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