It is currently not possible to order printed and bound versions of standards. This is due to challenges related to our printing supplier. We are working to resolve the situation and apologize for any inconvenience this may cause. For other options, contact salg@standard.no.
Standard

NEK IEC 63068-1:2019

Published
Preview

Corrigenda and amendments are bought separately.

Language
Services

Abstract

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.  

Document information

  • Standard from NEK
  • Published:
  • Edition: 1.0
  • Version: 1
  • Document type: NAT
  • ICS 31.080.99
  • National Committee NEK/NK47

Product Relations

  • Adopted from: IEC 63068-1:2019