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Standard

NEK IEC 62047-9:2011

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Abstract

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Document information

  • Standard from NEK
  • Published:
  • Edition: 1.0
  • Version: 1
  • Document type: NAT
  • ICS 31.080.99
  • National Committee TC 47/SC 47F

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  • Adopted from: IEC 62047-9:2011