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NEK EN IEC 62819:2023

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Abstract

This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).

Document information

  • Standard from NEK
  • Published:
  • Edition: 2023-05
  • Version: 1
  • Document type: NAT
  • ICS 13.260
  • ICS 29.240.99
  • ICS 29.260.99
  • National Committee NEK/NK78

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EU law: 2016/425

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  • Adopted from: EN IEC 62819:2023 , 0