Standard

IEC 60747-8:1984 ED1

Nov 1984 Revised

Note: This standard has a new edition: IEC 60747-8:2010+AMD1:2021 CSV

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Language English/French

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Amendment 2 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors Revised IEC 60747-8:1984/AMD2:1993 ED1 Amendment from Publication date: Dec 1993 Version: 1 Pages: 23 Language: English/French Services: Read Online (No printing ), Printed and bound
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Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors Revised IEC 60747-8:1984/AMD1:1991 ED1 Amendment from Publication date: Jul 1991 Version: 1 Pages: 17 Language: English/French Services: Read Online (No printing ), Printed and bound

Abstract

Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.

Document information

Standard from IEC
Published: 30 November 1984
Withdrawn: 31 December 2000
Edition: 1
Version: 1
Document type: IS
Pages
ISBN: 2831810523

ICS 31.080.30
ISO TC TC 47/SC 47E

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Adopted by: NEK IEC 61355-1:2008
Revised by: IEC 60747-8:2000 ED2
Replaces: IEC 60147-2G:1975 ED1

IEC 60747-8:1984 ED1

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IEC 60747-8:2010+AMD1:2021 CSV

IEC 60747-8:2010 ED3

IEC 60747-8:2000 ED2

IEC 60747-8:1984 ED1

IEC 60147-2G:1975 ED1

Abstract

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Version history Related corrigendum and amendments (2)

IEC 60747-8:1984/AMD2:1993 ED1

IEC 60747-8:1984/AMD1:1991 ED1

Version history History (5)

IEC 60747-8:2010+AMD1:2021 CSV

IEC 60747-8:2010 ED3

IEC 60747-8:2000 ED2

IEC 60747-8:1984 ED1

IEC 60147-2G:1975 ED1

Abstract

Document information

Product Relations

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