Handlevagon 0
Standard

NEK IEC 62979:2017

Publisert

Merknad: Denne standarden har en ny utgave: NEK IEC 62979:2017

Forhåndsvisning

Rettelser og tillegg kjøpes separat.

Språk
Tjenester

Omfang

IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Dokumentinformasjon

  • Standard fra NEK
  • Publisert:
  • Utgave: 1.0
  • Versjon: 1
  • Varetype: NAT
  • Products.Specs.pages
  • ICS 27.160
  • National Committee NEK/NK82

Produktrelasjon

  • Adoptert fra: IEC 62979:2017