Standard

NEK IEC 62979:2017

Aug 2017 Published

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Language English

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Abstract

IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Document information

Standard from NEK
Published: 10 August 2017
Edition: 1.0
Version: 1
Document type: NAT
Pages
ISBN:

ICS 27.160
National Committee NEK/NK82

Product Relations

Adopted from: IEC 60317-18:2020 RLV
Adopted from: IEC 60317-18:2020 ED4

NEK IEC 62979:2017

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