Standard

JEDEC JESD57A

Published

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Abstract

Purpose This test method defines the requirements and procedures for single-event effects (SEE) testing of analog and/or digital discrete semiconductor devices and integrated circuits by irradiation with energetic heavy ions. Applicable test facilities This test method is valid only when using a Van de Graaff or cyclotron accelerator. In principle, this test method may be applicable to conduct SEE tests using a synchrotron accelerator; however, the application of this method to accelerators that deliver discontinuous (pulsed) flux and the potential interferences are not directly addressed in this test method. A test method for a Cf-252 source is also not included. This test method assumes that the accelerator test facilities can provide measurements of ion fluence and total ionizing dose, and that the testing organization has the equipment for performing these tests. Basic effects addressed SEE includes any manifestation of soft or hard errors induced by a single ion strike. These errors include single event upset (SEU) (comprising both single-bit upset (SBU) and multiple cell upset (MCU)), single-event functional interrupt (SEFI), digital and analog single-event transients (SET) that may introduce a soft error in nearby circuits, single-event burnout (SEB), single-event gate rupture (SEGR), and single-event latchup (SEL). Newer technologies can have undefined modes of SEE that will require measurement and analysis capabilities that are beyond the scope of this document. See [1-3] for information on the SEE susceptibilities of different device types. Limits of the test method This test method only applies to SEE testing using heavy ions. Heavy ions are defined as ions with an atomic number Z > 1. Goal of SEE testing For SEU, SET, SEFI, and SEL, the end product of the test is a plot or table of the SEE cross section vs. linear energy transfer (LET). The amount of data required is detailed in clause 7. These data can usually be combined with the predicted heavy-ion environment of the intended space application in order to predict an expected SEE rate for the device under test (DUT). In addition, SET testing can result in characterization of transient duration and/or amplitude. For SEB and SEGR, the end product is to establish safe operation limits. Protective-mode testing (see 5.2.4.3) can be employed to measure an SEB cross-section curve; there is no known SEGR protective-mode test circuit. Warnings These tests can involve hazardous materials, operations, and equipment. • Many power devices require operating voltages in excess of 32 volts and safety precautions shall be followed to ensure safe operations of all equipment and personnel. • Test hardware and parts may become radioactive. This test method does not address all of the safety problems associated with this type of testing. It is the responsibility of the user of this test method in consultation with accelerator personnel to establish the appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Interferences Annex A must be reviewed before initiating SEE testing.

Document information

  • Standard from JEDEC_AC
  • Published:
  • Version: 0
  • Document type: IS