Standard

JEDEC JEP204

Published

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Abstract

The advent of silicon carbide (SiC) into power electronic conversion semiconductor (PECS) markets alongside conventional silicon PECS has created a need to differentiate between the two, owing to variations in material properties and usage conditions. This document serves as a catalog to provide an overview of the reliability and ruggedness stress procedures relevant to silicon carbide PECS devices encompassing bare die, discrete packages, and modules. The scope of this document includes the failure modes addressed by the stress procedures and the definitions of the different stressors applied in the procedures, such as voltage, current, temperature, humidity, switching, altitude etc., for PECS devices, namely transistors and diodes. Beyond that, the individual stress procedures described here broadly cover other key aspects, such as the uniqueness of silicon carbide devices, the definition of responses, and the use of any specialized apparatus. Not all stress procedures listed in the catalog need to be performed during qualification. The actual selection of stress procedures relevant for qualification depends on the product and application requirements. The definition of qualification requirements, such as sample size, stress conditions, and duration of stress, is outside the scope of this document and will be discussed in a separate SiC PECS qualification document.

Document information

  • Standard from JEDEC_AC
  • Published:
  • Version: 0
  • Document type: IS